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IRFP450LC中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFP450LC
廠商型號(hào)

IRFP450LC

功能描述

Power MOSFET

文件大小

1.54602 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 23:00:00

IRFP450LC規(guī)格書詳情

VDS (V) 500

RDS(on) (Ω) VGS = 10 V 0.40

Qg (Max.) (nC) 74

Qgs (nC) 19

Qgd (nC) 35

Configuration Single

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole

FEATURES

? Ultra Low Gate Charge

? Reduced Gate Drive Requirement

? Enhanced 30 V VGS Rating

? Reduced Ciss, Coss, Crss

? Isolated Central Mounting Hole

? Dynamic dV/dt Rated

? Repetitive Avalanche Rated

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFP450LC

  • 功能描述:

    MOSFET N-Chan 500V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
23+
NA/
53
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詢價(jià)
Infineon/英飛凌
21+
TO-247(AC)
6000
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IR
2016+
TO-247AC
5500
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IR
23+
FAX : 6564815466
20000
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VISHAY/威世
2020+
NA
80000
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IR
24+
TO247
58000
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IR
24+
TO-3P
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IR
23+
TO-247AC
19526
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VISHAY
24+
TO-247
12000
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IR
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MODULE
1290
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