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IRFPS3810PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFPS3810PBF
廠商型號

IRFPS3810PBF

功能描述

HEXFET? Power MOSFET

文件大小

173.31 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-22 23:00:00

IRFPS3810PBF規(guī)格書詳情

Description

The HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRFPS3810PBF

  • 功能描述:

    MOSFET 100V SINGLE N-CH 9mOhms 260nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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21+
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IR
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IR
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IR
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IR
1022+
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Infineon/英飛凌
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詢價
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20+
SMD
880000
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Infineon Technologies
22+
TO274AA
9000
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INFINEON/英飛凌
24+
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全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價