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IRFR/U1010Z中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFR/U1010Z規(guī)格書詳情
Description
Specifically designed for Automotive applications, this MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
Features
? Advanced Process Technology
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax
