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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR120TRPBFA	文件：838.17 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRR	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRRPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120TRRPBF	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120TRRPBFA	文件：838.17 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFR120Z	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFR120Z	文件：4.27158 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120Z	文件：335.34 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFR120ZPBF	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFR120ZPBF	文件：324.18 Kbytes Page：11 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRFR120ZPBF	文件：4.26012 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR120ZPBF	文件：4.27158 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFRU120A	文件：256.25 Kbytes Page：7 Pages	AdvancedPowerMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFRU120A	文件：258.5 Kbytes Page：7 Pages	AdvancedPowerMOSFET	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFU120	文件：56 Kbytes Page：7 Pages	8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFU120	文件：179.46 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFU120	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRFU120	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120	文件：1.8679 Mbytes Page：4 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司	DOINGTER

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市中福國際管理有限公司	IRFR120TRPbFa	VISHAY/威世	23+	TO-252	360000	專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低	詢價
現(xiàn)代芯城（深圳）科技有限公司	IRFR120TRPBF-BE3		24+	N/A	82000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRFR120TRPBFFETIGBTIC	VISHAY/威世	23+	D-PAK(TO-252)	10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市得捷芯城科技有限公司	IRFR120TRPBFMOSFET或IGBT	IR	23+	NA/	3880	原裝現(xiàn)貨,當天可交貨,原型號開票	詢價
深圳市威爾健半導體有限公司	IRFR120TRPBFMOSFET或IGBT開關(guān)IC	IR	23+	to-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市湘達電子科技有限公司	IRFR120TRPBFMOSFET或IGBT開關(guān)IC	VISHAY/威世	2022+	D-PAK(TO-252)	8000	只做原裝支持實單,有單必成。	詢價
深圳廊盛科技有限公司	IRFR120TRPBFMOSFET或IGBT開關(guān)IC	IR	2022	to-252	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市賽美科科技有限公司	IRFR120TRPBFMOSFET或IGBT開關(guān)IC	IR	新年份	TO-252	69520	一級代理原裝正品現(xiàn)貨,支持實單!	詢價
深圳龐田科技有限公司	IRFR120TRPBFMOSFET或IGBT開關(guān)IC	VISHAY/威世	2023+	D-PAK(TO-252)	50000	AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站	詢價
深圳市德力誠信科技有限公司	IRFR120TRPBF-VB	VBSEMI	24+	con	35960	查現(xiàn)貨到京北通宇商城	詢價

更多IRFR120TRPBFA供應(yīng)商更新時間2025-1-7 10:33:00

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