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IRFR224中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR224
廠商型號(hào)

IRFR224

功能描述

Power MOSFET

文件大小

3.37389 Mbytes

頁面數(shù)量

7

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-18 20:00:00

IRFR224規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR224/SiHFR224)

? Straight Lead (IRFU224/SiHFU224)

? Available in Tape and Reel

? Fast Switching

? Ease of Paralleling

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFR224

  • 功能描述:

    MOSFET N-Chan 250V 3.8 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
SAMSUNG/三星
22+
SOT-252
100000
代理渠道/只做原裝/可含稅
詢價(jià)
IR
23+
NA/
353
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
IR
24+
TO 252
161259
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
IR
24+
TO-252
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
詢價(jià)
IR
23+
TO-252
35890
詢價(jià)
SAMSUNG/三星
24+
TO-252
505348
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
IR
21+
TO-252
5587
原裝現(xiàn)貨庫存
詢價(jià)
IR
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
VISHAY
22+23+
TO-252
28920
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
Vishay(威世)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
詢價(jià)