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IRFR2405PBF中文資料KERSEMI數(shù)據手冊PDF規(guī)格書
IRFR2405PBF規(guī)格書詳情
Description
Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Surface Mount (IRFR2405)
● Straight Lead (IRFU2405)
● Advanced Process Technology
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產品屬性
- 型號:
IRFR2405PBF
- 功能描述:
MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
23+ |
TO252 |
3035 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IR |
2022 |
DPAK |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
TO-252 |
6000 |
原裝現(xiàn)貨,長期供應,終端可賬期 |
詢價 | |||
IR |
2018+ |
TO252 |
6528 |
只做原裝正品假一賠十!只要網上有上百分百有庫存放心 |
詢價 | ||
24+ |
N/A |
57000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IR |
23+ |
TO-252 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
2018+ |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | |||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
98000 |
詢價 |