IRFR2605中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR2605規(guī)格書詳情
VDSS = 55V
RDS(on) = 0.075?
ID = 19A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● ESD Protected
● Surface Mount (IRFR2605)
● Straight Lead (IRFU2605)
● 150°C Operating Temperature
● Repetitive Avalanche Rated
● Fast Switching
產(chǎn)品屬性
- 型號：
IRFR2605
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
1029 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
VB |
D-PAK |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
23+ |
TO-252 |
35890 |
詢價 | |||
IR |
2021+ |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Infineon Technologies |
2022+ |
TO-252-3,DPak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
I |
22+ |
D-PAK |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
I |
23+ |
D-PAK |
10000 |
公司只做原裝正品 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
IR |
23+ |
SOT-252 |
1977776 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
