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IRFR3303PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFR3303PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3303PBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3303PBF

ULTRALOWONRESISTANCE

IRF

International Rectifier

IRFR3303TRL

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3303TRLPBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR3303TRPBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFU3303

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFU3303

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU3303PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFU3303PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFU3303PBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRL3303

HEXFETPOWERMOSFET

IRF

International Rectifier

IRL3303L

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL3303LPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRL3303PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRL3303S

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL3303SPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRLI3303

HEXFETPowerMOSFET

IRF

International Rectifier

IRLL3303

HEXFETPowerMOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR3303CPBF

  • 功能描述:

    MOSFET N-CH 30V 33A DPAK

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
INFINEON
1503+
TO-252
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
I
23+
TO-252AA
10000
公司只做原裝正品
詢價(jià)
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
VB
21+
TO-252AA
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
Infineon Technologies
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Infineon Technologies
21+
TO2523 DPak (2 Leads + Tab) SC
13880
公司只售原裝,支持實(shí)單
詢價(jià)
Infineon Technologies
23+
TO2523 DPak (2 Leads + Tab) SC
9000
原裝正品,支持實(shí)單
詢價(jià)
Infineon Technologies
24+
原裝
5000
原裝正品,提供BOM配單服務(wù)
詢價(jià)
Infineon Technologies
2022+
TO-252-3,DPak(2 引線 + 接片
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
更多IRFR3303CPBF供應(yīng)商 更新時(shí)間2024-10-31 9:25:00