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IRFR3711TRPBF

HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse

IRF

International Rectifier

IRFR3711Z

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

IRF

International Rectifier

IRFR3711Z

N-ChannelMOSFETTransistor

?DESCRITION ?HighFrequencySynchronousBuckConvertersForComputerProcessorPower ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤5.7m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR3711Z

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3711Z

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

IRF

International Rectifier

IRFR3711ZCPBF

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3711ZCPBF

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

IRF

International Rectifier

IRFR3711ZCPBF

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR3711ZPBF

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

IRF

International Rectifier

IRFR3711ZPBF

HighFrequencySynchronousBuckConvertersforComputerProcessorPower

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFR3711TRL

  • 功能描述：

    MOSFET N-CH 20V 100A DPAK

  • RoHS：

    否

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2020+
TO-252
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
IR
21+
TO-252
6000
原裝正品
 詢價(jià)
IR
24+
TO-252
6000
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
IOR
24+
TO252
3000
詢價(jià)
IOR
04+/05+
TO252
3036
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
23+
TO252
8890
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
IR
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
IR
22+
TO-252
5000
全新原裝現(xiàn)貨!價(jià)格優(yōu)惠!可長期
 詢價(jià)
IR
24+
TO252
2789
原裝優(yōu)勢!絕對公司現(xiàn)貨!
 詢價(jià)
更多IRFR3711TRL供應(yīng)商 更新時(shí)間2025-1-27 15:22:00

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