首頁 >IRFR3910TRL>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A) | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A) | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Rad-hardplastic2Apositivelowdropvoltageregulator Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hardplastic2Apositivelowdropvoltageregulator Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-hardplastic2Apositivelowdropvoltageregulator Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號:
IRFR3910TRL
- 功能描述:
MOSFET MOSFT 100V 15A 115mOhm 29.3nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
D-Pak |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IR |
15+ |
原廠原裝 |
6000 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價 | ||
INFINEON |
21+ |
TO-252 |
12000 |
全新原裝公司現(xiàn)貨
|
詢價 | ||
INFINEON |
21+ |
DPAK |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
INFINEON |
23+ |
TO-252 |
12504 |
原裝進(jìn)口、正品保障、合作持久 |
詢價 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
DISCRETE |
3000 |
IR |
6000 |
詢價 | |||
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 |
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