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IRFR3910TRLPBF

Ultra Low On-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR3910TRPBF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFR3910TRPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFRU3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFRU3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU3910

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU3910

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU3910

PowerMOSFET(Vdss=100V,Rds=0.115ohm,Id=16A)

IRF

International Rectifier

IRFU3910PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFU3910PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFU3910PBF

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFU3910PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

JCS3910

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS3910R-O-R-N-A

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS3910R-O-R-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS3910V-O-V-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

KSMU3910

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

LEO3910

Rad-hardplastic2Apositivelowdropvoltageregulator

Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LEO3910PDT

Rad-hardplastic2Apositivelowdropvoltageregulator

Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

LEO3910PDT-D

Rad-hardplastic2Apositivelowdropvoltageregulator

Features ?Operatinginputvoltagefrom3Vto12V ?Adjustableoutputvoltagefrom1.23Vto9V ?Low-dropoutvoltage:0.35V@IO=400mA ?Overtemperatureprotection ?Overcurrentprotection ?Adjustablecurrentlimitation ?Inhibit(ON/OFF)TTL-compatiblecontrol ?Goldbonding ?N

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    IRFR3910TRL

  • 功能描述:

    MOSFET MOSFT 100V 15A 115mOhm 29.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
IR
15+
原廠原裝
6000
進(jìn)口原裝現(xiàn)貨假一賠十
詢價
INFINEON
21+
TO-252
12000
全新原裝公司現(xiàn)貨
詢價
INFINEON
21+
DPAK
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
Infineon(英飛凌)
23+
TO-252
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
INFINEON
23+
TO-252
12504
原裝進(jìn)口、正品保障、合作持久
詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
DISCRETE
3000
IR
6000
詢價
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
更多IRFR3910TRL供應(yīng)商 更新時間2025-1-16 17:17:00