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IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105ZPBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRFR4105ZPBF

AUTOMOTIVE MOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105ZPBF

Advanced Process Technology

IRF

International Rectifier

IRFR4105ZPBF

Advanced Process Technology

IRF

International Rectifier

IRFR4105ZPBF_15

Advanced Process Technology

IRF

International Rectifier

IRFR4105ZTRL

AUTOMOTIVEGRADE

Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105ZTRPBF

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFRU4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFU4105

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFR4105ZPBF

  • 功能描述：

    MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
21+
TO-252
20000
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
TO-252
1375
只做原廠渠道 可追溯貨源
 詢價
IR
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
Infineon(英飛凌)
24+
TO-252
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IT
16+
TO252
7
全新原裝現(xiàn)貨
 詢價
IR
2020+
TO-252
665
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
Infineon
24+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
更多IRFR4105ZPBF供應(yīng)商 更新時間2025-5-12 14:13:00

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