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IRFR420TRRPBFA

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow

Intersil

Intersil Corporation

IRFU420

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.4A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

IRF

International Rectifier

IRFU420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=2.4A@TC=25℃ ?DrainSourceVoltage-:VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=3.0Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU420

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420A

SMPSMOSFET

HEXFET?PowerMOSFET Applications ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterize

IRF

International Rectifier

IRFU420A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420A

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU420A

PowerMOSFET

FEATURES ?LowgateChargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420APBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)max=3.0廓,ID=3.3A)

SMPSMOSFET Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCOSSspecified(SeeAN1001) Applications ?SwitchModePowerSupply(SMPS)

IRF

International Rectifier

IRFU420APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420APbF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IR
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IR
07+
TO-252
340
詢價(jià)
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
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HARRIS(哈利斯)
23+
6000
誠信服務(wù),絕對原裝原盤
詢價(jià)
24+
N/A
82000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
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IR
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
IR
06+
TO-252
15000
原裝庫存
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IR/FSC
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
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IR
21+
TO-252
30000
只做正品原裝現(xiàn)貨
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更多IRFR420TRRPBF供應(yīng)商 更新時(shí)間2024-10-25 13:00:00