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IRFR540ZPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFR540ZPBF
廠商型號

IRFR540ZPBF

功能描述

Advanced Process Technology

文件大小

359.46 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-24 22:30:00

IRFR540ZPBF規(guī)格書詳情

Description

This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating

temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of

applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

Halogen-Free

產(chǎn)品屬性

  • 型號:

    IRFR540ZPBF

  • 功能描述:

    MOSFET 100V SINGLE N-CH 28.5mOhms 39nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
IR
2020+
TO-252
80000
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23+
NA/
8735
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880000
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2016+
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6528
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TO-252
67410
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22+
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25000
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21+
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22+
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2
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