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IRFR9210TRLPBF中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFR9210TRLPBF
廠商型號(hào)

IRFR9210TRLPBF

功能描述

Power MOSFET

文件大小

888.74 Kbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱(chēng)

Vishay威世科技

中文名稱(chēng)

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-27 23:01:00

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IRFR9210TRLPBF規(guī)格書(shū)詳情

FEATURES

? Dynamic dV/dt rating

? Repetitive avalanche rated

? Surface-mount (IRFR9210, SiHFR9210)

? Straight lead (IRFU9210, SiHFU9210)

? Available in tape and reel

? P-channel

? Fast switching

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface-mount applications.

產(chǎn)品屬性

  • 型號(hào):

    IRFR9210TRLPBF

  • 功能描述:

    MOSFET P-Chan 200V 1.9 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
24+
NA/
2400
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
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VISHAY
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80000
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Vishay(威世)
23+
NA
20094
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IR
21+
TO-252
1709
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IR
25+23+
TO-252
34082
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IR
2023+
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50000
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VishayIR
24+
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7500
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IR
21+
D-pak
9852
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IR
22+
TO-252
27900
原裝正品現(xiàn)貨
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NK/南科功率
2025+
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986966
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