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IRFR9214PBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR9214PBF
廠商型號(hào)

IRFR9214PBF

功能描述

Power MOSFET

文件大小

3.3941 Mbytes

頁面數(shù)量

7

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡(jiǎn)稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-3 16:06:00

IRFR9214PBF規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? P-Channel

? Surface Mount (IRFR9214/SiHFR9214)

? Straight Lead (IRFU9214/SiHFU9214)

? Advanced Process Technology

? Fast Switching

? Fully Avalanche Rated

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFR9214PBF

  • 功能描述:

    MOSFET P-Chan 250V 2.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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