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IRFR9220TRR中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR9220TRR
廠商型號(hào)

IRFR9220TRR

功能描述

Power MOSFET

文件大小

2.04248 Mbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 13:30:00

IRFR9220TRR規(guī)格書詳情

DESCRIPTION

Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR9220/SiHFR9220)

? Straight Lead (IRFUFU9220/SiHFU9220)

? Available in Tape and Reel

? P-Channel

? Fast Switching

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號(hào):

    IRFR9220TRR

  • 功能描述:

    MOSFET P-Chan 200V 3.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
2023+
SOT252
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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IR
23+
TO-252
50000
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VISHAY
NA
8560
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IR
21+
D-pak
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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IR
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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VISHAY(威世)
2112+
TO-252-3
115000
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IR
23+
D-PAK
19526
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VISHAY
22+23+
TO-252
27846
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IR
24+
TO-252
36800
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IR
05+
TO-252
15000
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