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IRFSL4410

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRFSL4410

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL4410PBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow

IRF

International Rectifier

IRFSL4410Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL4410ZPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow

IRF

International Rectifier

IXBD4410

ISOSMARTHalfBridgeDriverChipset

TheIXBD4410/IXBD4411ISOSMARTchipsetisdesignedtocontrolthegatesoftwoPowerMOSFETsorPowerIGBTsthatareconnectedinahalfbridge(phase-leg)configurationfordrivingmultiple-phasemotors,orusedinapplicationsthatrequirehalf-bridgepowercircuits.TheIXBD4410/IXBD4411isaf

IXYS

IXYS Corporation

IXBD4410P

ISOSMARTHalfBridgeDriverChipset

TheIXBD4410/IXBD4411ISOSMARTchipsetisdesignedtocontrolthegatesoftwoPowerMOSFETsorPowerIGBTsthatareconnectedinahalfbridge(phase-leg)configurationfordrivingmultiple-phasemotors,orusedinapplicationsthatrequirehalf-bridgepowercircuits.TheIXBD4410/IXBD4411isaf

IXYS

IXYS Corporation

IXBD4410PI

ISOSMARTHalfBridgeDriverChipset

TheIXBD4410/IXBD4411ISOSMARTchipsetisdesignedtocontrolthegatesoftwoPowerMOSFETsorPowerIGBTsthatareconnectedinahalfbridge(phase-leg)configurationfordrivingmultiple-phasemotors,orusedinapplicationsthatrequirehalf-bridgepowercircuits.TheIXBD4410/IXBD4411isaf

IXYS

IXYS Corporation

IXBD4410SI

ISOSMARTHalfBridgeDriverChipset

TheIXBD4410/IXBD4411ISOSMARTchipsetisdesignedtocontrolthegatesoftwoPowerMOSFETsorPowerIGBTsthatareconnectedinahalfbridge(phase-leg)configurationfordrivingmultiple-phasemotors,orusedinapplicationsthatrequirehalf-bridgepowercircuits.TheIXBD4410/IXBD4411isaf

IXYS

IXYS Corporation

KD4410

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

詳細(xì)參數(shù)

  • 型號：

    IRFS4410ZTRLPBF

  • 功能描述：

    MOSFET MOSFT 100V 97A 9mOhm 83nC Qg

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
2020+
TO-263
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
IR/INFINEON
1727+
TO-263
14
只做原裝,可開13個(gè)點(diǎn)稅票
 詢價(jià)
INFINEON/IR
1907+
NA
2400
20年老字號,原裝優(yōu)勢長期供貨
 詢價(jià)
INFINEON
22+
TO-263-2
4680
原裝正品可支持驗(yàn)貨,歡迎咨詢
 詢價(jià)
Infineon Technologies
24+
PG-TO263-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IR
2020+
TO-263
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
INFINEON/英飛凌
20+
to-263
100
進(jìn)口原裝假一賠十支持含稅
 詢價(jià)
INFINEON
2021
TO-263
2400
全新原裝公司現(xiàn)貨
詢價(jià)
IR/INFINEON
22+
TO-263
2769
絕對原裝!公司現(xiàn)貨!
 詢價(jià)
INFINEON
21+
TO263
6300
只做原裝,可開稅票
 詢價(jià)
更多IRFS4410ZTRLPBF供應(yīng)商 更新時(shí)間2025-2-24 9:08:00

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