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IRFU120NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFU120NPBF規(guī)格書詳情
VDSS = 100V
RDS(on) = 0.21?
ID = 9.4A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount applications.
Surface Mount (IRFR120N)
Straight Lead (IRFU120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead Free
產(chǎn)品屬性
- 型號：
IRFU120NPBF
- 功能描述：
MOSFET MOSFT 100V 9.1A 210mOhm 16.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
TO-251 |
112048 |
原廠可訂貨,技術(shù)支持,直接渠道?？珊灡９┖贤?/div> |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-251(I-PAK) |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
INFINEON |
23+ |
K-B |
54000 |
只有原裝,請來電咨詢 |
詢價 | ||
IR |
2020+ |
TO-251 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
IR |
2018+ |
TO-251 |
26976 |
代理原裝現(xiàn)貨/特價熱賣! |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
1050 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-251 |
159839 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
21+ |
TO-251 |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
24+ |
TO-251 |
3800 |
大批量供應(yīng)優(yōu)勢庫存熱賣 |
詢價 |
