首頁(yè)>IRFU3710ZPBF>規(guī)格書詳情
IRFU3710ZPBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFU3710ZPBF規(guī)格書詳情
Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Multiple Package Options
● Lead-Free
產(chǎn)品屬性
- 型號(hào):
IRFU3710ZPBF
- 功能描述:
MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR/INFI |
2020+ |
TO-251 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR |
22+ |
TO-251 |
4500 |
全新原裝品牌專營(yíng) |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
cet |
2023+ |
TO-251 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
IR |
2018+ |
TO251 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心 |
詢價(jià) | ||
IR |
24+ |
TO-251 |
219 |
詢價(jià) | |||
NA |
19+ |
75100 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | |||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
21+ |
TO-251 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
IR |
23+ |
I-PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) |