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IRFU4104PBF中文資料KERSEMI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFU4104PBF規(guī)格書(shū)詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFU4104PBF
- 功能描述：
MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
5755 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢(xún)價(jià) | ||
IR |
22+23+ |
TO-251 |
28854 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢(xún)價(jià) | |||
IR |
24+ |
TO-251 |
10050 |
只做原廠渠道 可追溯貨源 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-251 |
2200 |
詢(xún)價(jià) | |||
IRC |
1535+ |
884 |
詢(xún)價(jià) | ||||
Infineon Technologies |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
IR |
22+ |
TO-251 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單 |
詢(xún)價(jià) | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢(xún)價(jià) |
