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IRFU5410PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFU5410PBF
廠商型號

IRFU5410PBF

功能描述

HEXFET Power MOSFET

文件大小

264.04 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-24 13:27:00

IRFU5410PBF規(guī)格書詳情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

● Ultra Low On-Resistance

● P-Channel

● Surface Mount (IRFR5410)

● Straight Lead (IRFU5410)

● Advanced Process Technology

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號:

    IRFU5410PBF

  • 功能描述:

    MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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