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IRFU5410PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFU5410PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR5410)
● Straight Lead (IRFU5410)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號:
IRFU5410PBF
- 功能描述:
MOSFET MOSFT P-Ch -100V -13A 205mOhm 38.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
09+ |
TO-251 |
20 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON |
23+ |
K-B |
5996 |
只有原裝,請來電咨詢 |
詢價 | ||
IR |
24+ |
TO-251 |
8000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
825 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR |
2018+ |
TO-251 |
6528 |
承若只做進口原裝正品假一賠十! |
詢價 | ||
IR |
17+ |
TO-251 |
23000 |
詢價 | |||
Infineon Technologies |
24+ |
IPAK(TO-251AA) |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
IR |
23+ |
TO-251 |
22000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 |