IRFZ14S中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ14S規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for lowprofile applications.
● Advanced Process Technology
● Surface Mount (IRFZ14S)
● Low-profile through-hole (IRFZ14L)
● 175°C Operating Temperature
● Fast Switching
產(chǎn)品屬性
- 型號：
IRFZ14S
- 功能描述：
MOSFET N-Chan 60V 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
IR |
2204+ |
TO-263 |
12891 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-263 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
IRF |
23+ |
SOT263 |
9000 |
專業(yè)優(yōu)勢供應 |
詢價 | ||
IR |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VISHAY(威世) |
23+ |
TO2633 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
IR |
23+ |
NA/ |
377 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
VBsemi |
24+ |
TO263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
I |
2020+ |
D2PAK |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
24+ |
N/A |
47000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 |
