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IRFZ24N

N-channel enhancement mode TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarew

IRF

International Rectifier

IRFZ24N

isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrols,these devicesareparticularlywellsuitedforbridgecircuitswhere diodespeedandcommutatingsafeoperatingareasarecritical andofferadditional

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFZ24N

Advanced Process Technology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessT

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ24N

HEXFET Power MOSFET

Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicethatHEXFETpowerMOSFETsarewellknow

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFZ24NL

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRFZ24NL

Power MOSFET

PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A

TEL

TRANSYS Electronics Limited

IRFZ24NLPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFZ24NLPBF

isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-262(DPAK)packaging ?Surfacemount ?Highspeedswitching ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFZ24NPBF

HEXFET Power MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRFZ24N

  • 制造商:

    IRF

  • 制造商全稱:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
13+
TO-247
10000
深圳市勤思達(dá)科技有限公司主營IR系列全新原裝正品,現(xiàn)貨供應(yīng)IRFZ24N,歡迎咨詢洽談。
詢價(jià)
23+
TO-220
39896
專注原裝正品現(xiàn)貨特價(jià)中量大可定
詢價(jià)
IR
24+
TO-220
50
只做原廠渠道 可追溯貨源
詢價(jià)
IR
24+
TO-220
11000
絕對原裝現(xiàn)貨,價(jià)格低,歡迎詢購!
詢價(jià)
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
IR
21+
TO-220
12000
深圳原裝無鉛現(xiàn)貨
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IR
23+
TO/220
7000
絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
詢價(jià)
IOR
24+
TO-220
5022
詢價(jià)
IR
05+
TO-220
8000
自己公司全新庫存絕對有貨
詢價(jià)
IR
23+
TO-220AB
8890
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更多IRFZ24N供應(yīng)商 更新時間2025-2-2 11:03:00