首頁>IRFZ34EPBF>規(guī)格書詳情
IRFZ34EPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ34EPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Ease of Paralleling
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFZ34EPBF
- 功能描述：
MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3409 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
10+ |
TO-220 |
814 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
TO-220AB- |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
2016+ |
TO-220 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
VB |
TO220 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
2022 |
TO220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
24+ |
TO-220-3 |
1786 |
詢價 | |||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
23+ |
TO-220 |
3314 |
原廠原裝正品 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 |
