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IRHN7250_V01中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRHN7250_V01
廠(chǎng)商型號(hào)

IRHN7250_V01

功能描述

Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET? Technology

文件大小

1.6901 Mbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠(chǎng)商 International Rectifier
企業(yè)簡(jiǎn)稱(chēng)

IRF

中文名稱(chēng)

International Rectifier官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-5-29 16:10:00

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IRHN7250_V01規(guī)格書(shū)詳情

Features

? Single event effect (SEE) hardened

? Low RDS(on)

? Low total gate charge

? Simple drive requirements

? Hermetically sealed

? Electrically isolated

? Ceramic eyelets

? Light weight

? Surface Mount

? ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications

? DC-DC converter

? Motor drives

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This

technology has over a decade of proven performance and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low

gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching

and temperature stability of electrical parameters.

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