IRHN8250中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRHN8250規(guī)格書詳情
200 Volt, 0.10?, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1.
Features:
■ Radiation Hardened up to 1 x 106 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
產(chǎn)品屬性
- 型號(hào)：
IRHN8250
- 制造商：
International Rectifier
- 功能描述：
HEXFET, HIREL, RAD HARD,G4 - Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOP |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOP |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOP |
7000 |
詢價(jià) | |||
IR |
22+ |
SOP |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
CHINA |
22+ |
SMD-1 |
640 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) | ||
CHINA |
23+ |
SMD-1 |
10000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
IR |
18+ |
原廠原裝假一賠十 |
36 |
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠 |
詢價(jià) | ||
IR |
24+ |
36 |
全新原裝 |
詢價(jià) | |||
INFINEON |
23+ |
C-CCN-3 |
14253 |
原包裝原標(biāo)現(xiàn)貨,假一罰十, |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
