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IRHNA8260中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRHNA8260
廠商型號(hào)

IRHNA8260

功能描述

TRANSISTOR N-CHANNEL

文件大小

161.56 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-11 17:34:00

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IRHNA8260規(guī)格書(shū)詳情

RAD-Hard? HEXFET? TECHNOLOGY

International Rectifier’s RAD-HardTM HEXFET?technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Features:

■ Single Event Effect (SEE) Hardened

■ Low RDS(on)

■ Low Total Gate Charge

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light Weight

■ ESD Class: 3B per MIL-STD-750, Method 1020

產(chǎn)品屬性

  • 型號(hào):

    IRHNA8260

  • 制造商:

    International Rectifier

  • 功能描述:

    HEXFET, HIREL, RAD HARD,G4 - Bulk

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IR
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N/A
90000
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18+
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38
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IR
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64
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IR
N/A
N/A
100
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IR
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IR
23+
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IR
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6000
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