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IRHNKC9A97034中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRHNKC9A97034 |
| 功能描述 | Radiation Hardened Power MOSFET Surface Mount (SMD-0.5e Ceramic Lid) -60V, -32A, P-channel, R9 Superjunction Technology |
| 文件大小 |
558.72 Kbytes |
| 頁面數(shù)量 |
14 頁 |
| 生產(chǎn)廠商 | International Rectifier |
| 企業(yè)簡稱 |
IRF |
| 中文名稱 | International Rectifier官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-1-25 15:00:00 |
IRHNKC9A97034規(guī)格書詳情
Features
? Single event effect (SEE) hardened
(up to LET of 91.3 MeV·cm2/mg)
? Low RDS(on)
? Rugged SOA
? Improved Avalanche Energy
? Simple drive requirements
? Hermetically sealed
? Ceramic package
? Light weight
? Surface mount
ESD rating: Class 2 per MIL-STD-750, Method 1020
Description
IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved
immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy
Transfer (LET) up to 91.3 MeV·cm2/mg. Their combination of low RDS(on) and improved SOA will allow for better
performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices
retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature
stability of electrical parameters.
