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IRHNS67260中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRHNS67260規(guī)格書詳情
Features
? Single event effect (SEE) hardened
(up to LET of 90 MeV·cm2/mg)
? Low RDS(on)
? Low total gate charge
? Simple drive requirements
? Hermetically sealed
? Ceramic package
? Light weight
? Surface mount
? ESD rating: Class 3A per MIL-STD-750, Method 1020
Potential Applications
? DC-DC converter
? Motor drives
? Electric propulsion
Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of
90 MeV·cm2/mg. The combination of low RDS(on) and low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor controllers. These devices retain all of the well-established
advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical
parameters.