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IRLD120

POWER MOSFET

IRF

International Rectifier

IRLD120

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD120_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD120PBF

HEXFET Power MOSFET

IRF

International Rectifier

IRLD120PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLD120PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLF120

HEXFETTRANSISTORSTHRU-HOLE(TO-39)

IRF

International Rectifier

IRLF120

SimpleDriveRequirements

IRF

International Rectifier

IRLM120A

AdvancedPowerMOSFET

FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.176?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLM120A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLM120ATF

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLR/U120NPBF

SurfaceMount(IRLR120N)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR120

HEXFETPowerMOSFET

Description ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingt

IRF

International Rectifier

IRLR120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRLR120,SiHLR120) ?Straightlead(IRLU120,SiHLU120) ?AvailableintapeandreMel ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLR120A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLR120ATF

AdvancedpowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLR120ATF

N-channelEnhancementModePowerMOSFET

Features ?VDS=100V,ID=18.1A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRLD120

  • 功能描述:

    MOSFET N-Chan 100V 1.3 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2016+
DIP-4
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
IR
06+
原廠原裝
4249
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
23+
HEXDIP
19526
詢價(jià)
IOR
24+
DIP-4P
270
詢價(jià)
IR
17+
DIP-4
9700
只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
23+
DIP-4
12000
全新原裝假一賠十
詢價(jià)
IR
2020+
DIP-4
5800
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
IR
23+
65480
詢價(jià)
更多IRLD120供應(yīng)商 更新時(shí)間2025-1-11 10:05:00