首頁 >IRLI530GPBF>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRLI530GPBF | HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16廓 , ID=9.7A ) | IRF International Rectifier | IRF | |
IRLI530GPBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ADVANCEDPOWERMOSFET BVDSS=100V RDS(on)=0.12? ID=14A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON): | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Inductor | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
TurnlokLockingDevicesFlangedInletsOutlets | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
TurnlokLockingDevicesFlangedInletsOutlets | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
GREENOVALLAMPLED GREENOVALLAMPLED | SEOUL Seoul Semiconductor Co., Ltd. | SEOUL | ||
GREENOVALLAMPLED GREENOVALLAMPLED | SEOUL Seoul Semiconductor Co., Ltd. | SEOUL |
詳細(xì)參數(shù)
- 型號(hào):
IRLI530GPBF
- 功能描述:
MOSFET N-Chan 100V 9.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
VishayIR |
24+ |
TO-220F |
248 |
詢價(jià) | |||
IR/進(jìn)口原 |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
VISHAY |
23+ |
TO220AB |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
VISHAY |
1809+ |
TO220-3 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
VB |
21+ |
TO-220FULLPAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Vishay Siliconix |
21+ |
TO2203 Isolated Tab |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
I |
23+ |
TO-220FULLPAK |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) |
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