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IRLI620GPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLI620GPBF規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
Lead-Free
產(chǎn)品屬性
- 型號：
IRLI620GPBF
- 功能描述：
MOSFET N-Chan 200V 4.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VB |
TO-220F |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
23+ |
TO-220F |
35890 |
詢價(jià) | |||
VishayIR |
24+ |
TO-220F |
256 |
詢價(jià) | |||
Vishay Siliconix |
2022+ |
TO-220-3 全封裝,隔離接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
IR |
2022+ |
TO-220 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
7000 |
詢價(jià) | |||
VISHAY/威世 |
23+ |
TO220FP |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
vishay |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
VISHAY |
23+ |
TO220 |
7750 |
全新原裝優(yōu)勢 |
詢價(jià) | ||
24+ |
TO-262 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) |
