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IRLL3303PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Dynamic dv/dt Rating
● Logic-Level Gate Drive
● Fast Switching
● Ease of Paralleling
● Advanced Process Technology
● Ultra Low On-Resistance
● Lead-Free
產(chǎn)品屬性
- 型號：
IRLL3303PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 31mOhms 34nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
SOT-223 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
IR |
23+ |
NA/ |
3358 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
2020+ |
SOT-223 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
Infineon |
1721+ |
TO-223 |
30 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon Technologies |
22+ |
TO2614 TO261AA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
SOT223 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Infineon/英飛凌 |
23+ |
SOT-223 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IR |
SOT223 |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
Infineon/英飛凌 |
23+ |
SOT-223 |
25630 |
原裝正品 |
詢價 | ||
IR |
24+ |
65230 |
詢價 |
