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IRLR014NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLR014NPBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Logic-Level Gate Drive
● Surface Mount (IRLR024N)
● Straight Lead (IRLU024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRLR014NPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2022 |
DPAK |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
24+ |
D-pak |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-252 |
1425 |
詢價 | |||
IR |
21+ |
D-pak |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
17+ |
TO-252 |
6200 |
詢價 | |||
IR |
24+ |
DPAK |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
IR |
TO-252 |
貨真價實,假一罰十 |
25000 |
詢價 | |||
IR |
22+ |
TO-252 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
IR |
2022+ |
D-pak |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 |
