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IRLR3303PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRLR3303PBF規(guī)格書(shū)詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRLR3303PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 31mOhms 17.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
10+ |
TO-252 |
148 |
詢價(jià) | |||
IR |
2022+ |
D-pak |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
IR |
24+ |
65230 |
詢價(jià) | ||||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
19+ |
TO-252 |
75270 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) | ||
IR |
24+ |
D-pak |
20000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
InternationRectifer |
NA |
30000 |
100%全新原裝 假一賠十 |
詢價(jià) | |||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
IR |
23+24 |
TO-252 |
29840 |
主營(yíng)MOS管,二極.三極管,肖特基二極管.功率三極管 |
詢價(jià) |
