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PT3636

3.8V~24Voperation

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RMQCBA3636DGBA

36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCEA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCHA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQCLA3636DGBA

36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSAA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)

Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSDA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT

Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSGA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)

Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RMQSKA3636DGBA

36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT

Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems 

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

TPESD3636P

4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0

Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A(

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

供應商型號品牌批號封裝庫存備注價格
24+
N/A
76000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
VBSEMI
24+
con
35960
查現貨到京北通宇商城
 詢價
IR
23+
TO-252
50000
全新原裝正品現貨,支持訂貨
 詢價
IR
22+
TO-252
20000
保證原裝正品,假一陪十
 詢價
IR
23+
TO-252
50000
全新原裝正品現貨,支持訂貨
 詢價
IR
2022
TO-252
80000
原裝現貨,OEM渠道,歡迎咨詢
 詢價
IR
23+
3000
全新原裝，歡迎來電咨詢
 詢價
IR
23+
TO-252
8560
受權代理!全新原裝現貨特價熱賣!
 詢價
IR
22+
TO-252
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-252
8000
專注配單,只做原裝進口現貨
 詢價
更多IRLR3636TRPBF-CUTTAPE供應商 更新時間2025-3-13 11:06:00

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