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IRLU3105PBF規(guī)格書詳情
Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產(chǎn)品屬性
- 型號：
IRLU3105PBF
- 制造商：
International Rectifier
- 功能描述：
MOSFET, 55V, 25A, 37 MOHM, 13.3 NC QG, LOGIC LEVEL, I-PAK
- 功能描述：
TRANS MOSFET N-CH 55V 25A 3PIN IPAK - Rail/Tube
- 功能描述：
MOSFET N 55V 25A I-PAK
- 功能描述：
MOSFET, N, 55V, 25A, I-PAK
- 功能描述：
MOSFET, N, 55V, 25A, I-PAK; Transistor
- Polarity：
N Channel; Continuous Drain Current
- Id：
25A; Drain Source Voltage
- Vds：
55V; On Resistance
- Rds(on)：
37mohm; Rds(on) Test Voltage
- Vgs：
10V; Threshold Voltage Vgs
- Typ：
3V; Power Dissipation ;RoHS
- Compliant：
Yes
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
VBSEMI/臺灣微碧 |
23+ |
TO251 |
20000 |
原裝正品 歡迎咨詢 |
詢價 | ||
IR |
23+ |
TO-251 |
10000 |
原裝正品現(xiàn)貨 |
詢價 | ||
I |
23+ |
TO-251U |
7000 |
詢價 | |||
VB |
21+ |
TO-251U |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
TO-251 |
35200 |
一級代理/放心采購 |
詢價 | ||
ir |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
ir |
2023+ |
TO-251 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
VB |
TO-251U |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
24+ |
TO-251 |
24 |
只做原廠渠道 可追溯貨源 |
詢價 |
