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IS41C16100-60T中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IS41C16100-60T
廠商型號(hào)

IS41C16100-60T

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

123.63 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡(jiǎn)稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-12-29 23:00:00

IS41C16100-60T規(guī)格書(shū)詳情

DESCRIPTION

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

FEATURES

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode - 1,024 cycles / 128ms

? JEDEC standard pinout

? Single power supply:

— 5V ± 10 (IS41C16100)

— 3.3V ± 10 (IS41LV16100)

? Byte Write and Byte Read operation via two CAS

? Industrail Temperature Range -40oC to 85oC

? Lead-free available

產(chǎn)品屬性

  • 型號(hào):

    IS41C16100-60T

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ISSI
23+
NA/
44
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ISSI
2016+
TSOP
2600
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ISSI
1844+
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6528
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ISSI
08+
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8600
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ISSI
SOP
68900
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ISSI
22+
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24981
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ISSI
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9850
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ISSI
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8600
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