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IS41C16105

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-50KE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-50KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-50TE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-50TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-60K

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-60KE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-60KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-60KI

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS41C16105-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ICSI

Integrated Circuit Solution Inc

IS41C16105-60TE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

DESCRIPTION TheISSIIS41C16105andIS41LV16105are1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.FastPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword.TheByteWritecontrol,ofupperandlowerbyte,

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IS41C16105

  • 制造商:

    ISSI

  • 制造商全稱(chēng):

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ISSI
2015+
DIP/SMD
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
詢(xún)價(jià)
ICSI
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
24+
SOJ
166
詢(xún)價(jià)
ISSI
2022
TSOP
6800
原廠原裝正品,價(jià)格超越代理
詢(xún)價(jià)
INTEGRATEDSI
05+
原廠原裝
5216
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢(xún)價(jià)
ISSI
16+
TSOP
40
全新原裝現(xiàn)貨
詢(xún)價(jià)
ISSI
2339+
SOJ
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢(xún)價(jià)
ISSI
2020+
SOJ
18
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢(xún)價(jià)
ISSI
22+
TSOP-42
4650
詢(xún)價(jià)
ISSI
23+
TSOP
2240
絕對(duì)現(xiàn)貨庫(kù)存
詢(xún)價(jià)
更多IS41C16105供應(yīng)商 更新時(shí)間2024-11-1 9:00:00