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IS41C16256-50KI中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書

IS41C16256-50KI
廠商型號(hào)

IS41C16256-50KI

功能描述

256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

153.38 Kbytes

頁(yè)面數(shù)量

19 頁(yè)

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡(jiǎn)稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2024-11-1 16:30:00

IS41C16256-50KI規(guī)格書詳情

DESCRIPTION

TheISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16256 and IS41LV16256 ideal for use in 16 and 32-bit wide data bus systems.

FEATURES

? TTL compatible inputs and outputs

? Refresh Interval: 512 cycles/8 ms

? Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

? JEDEC standard pinout

? Single power supply

5V ± 10 (IS41C16256)

3.3V ± 10 (IS41LV16256)

? Byte Write and Byte Read operation via two CAS

? Extended Temperature Range -30oC to 85oC

? Industrail Temperature Range -40oC to 85oC

產(chǎn)品屬性

  • 型號(hào):

    IS41C16256-50KI

  • 制造商:

    ICSI

  • 制造商全稱:

    Integrated Circuit Solution Inc

  • 功能描述:

    256K x 16(4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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