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IS41LV16100-50T中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書

IS41LV16100-50T
廠商型號(hào)

IS41LV16100-50T

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

123.63 Kbytes

頁(yè)面數(shù)量

20 頁(yè)

生產(chǎn)廠商 Integrated Silicon Solution Inc
企業(yè)簡(jiǎn)稱

ISSI北京矽成

中文名稱

北京矽成半導(dǎo)體有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-2-3 23:00:00

IS41LV16100-50T規(guī)格書詳情

DESCRIPTION

The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.

FEATURES

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

— Self refresh Mode - 1,024 cycles / 128ms

? JEDEC standard pinout

? Single power supply:

— 5V ± 10 (IS41C16100)

— 3.3V ± 10 (IS41LV16100)

? Byte Write and Byte Read operation via two CAS

? Industrail Temperature Range -40oC to 85oC

? Lead-free available

產(chǎn)品屬性

  • 型號(hào):

    IS41LV16100-50T

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ISSI
23+
NA/
3500
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
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ISSI
2016+
TSOP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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N/A
23+
DIP
6500
全新原裝假一賠十
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ISSI
23+
28000
原裝正品
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ISSI
TSOP44
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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ISSI
23+
TSOP
7510
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
詢價(jià)
24+
SOP
7003
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ISS
1535+
2573
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ISSI
21+
TSOP
12588
原裝正品,自己庫(kù)存 假一罰十
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ISSI
24+
TSOP
65300
一級(jí)代理/放心購(gòu)買!
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