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IS42S16320B

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6BL

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6BLI

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6TL

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6TLI

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-75ETL

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-75ETLI

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-7BL

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-7BLI

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-7TL

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-7TLI

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs512MbSynchronousDRAMachieveshigh-speeddatatransferusingpipelinearchitecture.Allinputsandoutputssignalsrefertotherisingedgeoftheclockinput.The512MbSDRAMisorganizedasfollows. FEATURES ?Clockfrequency:166,143,133MHz ?Fullysynchronous;

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6BLI

包裝:卷帶(TR) 封裝/外殼:54-TFBGA 類別:集成電路(IC) 存儲器 描述:IC DRAM 512MBIT PARALLEL 54WBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6BLI-TR

包裝:卷帶(TR) 封裝/外殼:54-TFBGA 類別:集成電路(IC) 存儲器 描述:IC DRAM 512MBIT PARALLEL 54WBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS42S16320B-6BL-TR

包裝:卷帶(TR) 封裝/外殼:54-TFBGA 類別:集成電路(IC) 存儲器 描述:IC DRAM 512MBIT PARALLEL 54WBGA

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號:

    IS42S16320B

  • 功能描述:

    動態(tài)隨機存取存儲器 512M(32Mx16) 166MHz S動態(tài)隨機存取存儲器, 3.3v

  • RoHS:

  • 制造商:

    ISSI

  • 數(shù)據(jù)總線寬度:

    16 bit

  • 組織:

    1 M x 16

  • 封裝/箱體:

    SOJ-42

  • 存儲容量:

    16 MB

  • 訪問時間:

    50 ns

  • 電源電壓-最大:

    7 V

  • 電源電壓-最小:

    - 1 V

  • 最大工作電流:

    90 mA

  • 最大工作溫度:

    + 85 C

  • 封裝:

    Tube

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ISSI
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ISSI
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ISSI
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只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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ISSI
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256
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ISSI
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8653
全新原裝優(yōu)勢
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ISSI
10+
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1
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ISSI
2013+
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50
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ISSI
2020+
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更多IS42S16320B供應(yīng)商 更新時間2024-11-8 15:27:00