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首頁>IS43DR86400C-3DBLI>芯片詳情
IS43DR86400C-3DBLI 集成電路(IC)存儲器 ISSI/北京矽成
- 詳細信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號:
IS43DR86400C-3DBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術:
SDRAM - DDR2
- 存儲容量:
512Mb(64M x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
60-TFBGA
- 供應商器件封裝:
60-TWBGA(8x10.5)
- 描述:
IC DRAM 512MBIT PARALLEL 60TWBGA
供應商
- 企業(yè):
天津市博通航睿技術有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機:
18322198211
- 詢價:
- 電話:
18322198211
- 地址:
天津市南開區(qū)科研西路12號356室
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