IS45S32200E-75ETLA1中文資料北京矽成數(shù)據(jù)手冊(cè)PDF規(guī)格書

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

GENERAL DESCRIPTION

The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally confgured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.

FEATURES

? Clock frequency: 200, 166, 143, 133 MHz

? Fully synchronous; all signals referenced to a positive clock edge

? Internal bank for hiding row access/precharge

? Single 3.3V power supply

? LVTTL interface

? Programmable burst length: (1, 2, 4, 8, full page)

? Programmable burst sequence: Sequential/Interleave

? Self refresh modes

? 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)

? Random column address every clock cycle

? Programmable CAS latency (2, 3 clocks)

? Burst read/write and burst read/single write operations capability

? Burst termination by burst stop and precharge command