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IS61LF12836A集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料
廠商型號(hào) |
IS61LF12836A |
參數(shù)屬性 | IS61LF12836A 封裝/外殼為100-LQFP;包裝為卷帶(TR);類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC SRAM 4.5MBIT PARALLEL 100TQFP |
功能描述 | 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM |
封裝外殼 | 100-LQFP |
文件大小 |
166.7 Kbytes |
頁(yè)面數(shù)量 |
25 頁(yè) |
生產(chǎn)廠商 | Integrated Silicon Solution Inc |
企業(yè)簡(jiǎn)稱 |
ISSI【北京矽成】 |
中文名稱 | 北京矽成半導(dǎo)體有限公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-24 9:34:00 |
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IS61LF12836A規(guī)格書詳情
DESCRIPTION
The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
FEATURES
? Internal self-timed write cycle
? Individual Byte Write Control and Global Write
? Clock controlled, registered address, data and control
? Burst sequence control using MODE input
? Three chip enable option for simple depth expansion and address pipelining
? Common data inputs and data outputs
? Auto Power-down during deselect
? Single cycle deselect
? Snooze MODE for reduced-power standby
? Power Supply
LF: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5
VF: VDD 2.5V -5 +10, VDDQ 2.5V -5 +10
? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
? Automotive temperature available
? Lead-free available
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IS61LF12836A-6.5TQLI-TR
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
集成電路(IC) > 存儲(chǔ)器
- 包裝:
卷帶(TR)
- 存儲(chǔ)器類型:
易失
- 存儲(chǔ)器格式:
SRAM
- 技術(shù):
SRAM - 同步,SDR
- 存儲(chǔ)容量:
4.5Mb(128K x 36)
- 存儲(chǔ)器接口:
并聯(lián)
- 電壓 - 供電:
3.135V ~ 3.6V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
100-LQFP
- 供應(yīng)商器件封裝:
100-LQFP(14x20)
- 描述:
IC SRAM 4.5MBIT PARALLEL 100TQFP
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ISSI |
24+ |
TQFP100 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
ISSI, Integrated Silicon Solu |
23+ |
100-TQFP14x20 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
ISSI |
24+ |
TQFP |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
ISSI |
21+ |
TQFP100 |
6000 |
全新原裝 公司現(xiàn)貨 |
詢價(jià) | ||
ISSI Integrated Silicon Soluti |
22+ |
100TQFP (14x20) |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ISSI |
23+ |
TQFP |
3000 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
ISSI |
TQFP100 |
9850 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
ISSI |
24+ |
TQFP |
5000 |
專營(yíng)ISSI進(jìn)口原裝現(xiàn)貨可開(kāi)17增值稅票 |
詢價(jià) | ||
ISSI |
23+ |
100-TQFP |
65480 |
詢價(jià) | |||
ISSI |
2020+ |
TQFP |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) |
相關(guān)庫(kù)存
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