DESCRIPTION

The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.

FEATURES

? Internal self-timed write cycle

? Individual Byte Write Control and Global Write

? Clock controlled, registered address, data and control

? Burst sequence control using MODE input

? Three chip enable option for simple depth expansion and address pipelining

? Common data inputs and data outputs

? Auto Power-down during deselect

? Single cycle deselect

? Snooze MODE for reduced-power standby

? JTAG Boundary Scan for PBGA package

? Power Supply

LF: Vdd 3.3V + 5, Vddq 3.3V/2.5V + 5

VF: Vdd 2.5V + 5, Vddq 2.5V + 5

? JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages

? Lead-free available

? Automotive temperature available

IS61LF25636A-7.5TQ屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61LF25636A-7.5TQ存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。