首頁(yè) >IS61LF51218A>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IS61LF51218A | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
IS61LF51218A | 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM DESCRIPTION TheISSIIS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218Aarehigh-speed,low-powersynchronousstaticRAMsdesignedtoprovideburstable,high-performancememoryforcommunicationandnetworkingapplications. FEATURES ?Internalself-timedwritecycle ?IndividualByteWriteContr | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半導(dǎo)體有限公司 | ISSI | ||
包裝：卷帶（TR） 封裝/外殼：100-LQFP 類(lèi)別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | ||
包裝：卷帶（TR） 封裝/外殼：100-LQFP 類(lèi)別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc | ||
包裝：托盤(pán) 封裝/外殼：100-LQFP 類(lèi)別：集成電路（IC） 存儲(chǔ)器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc | ISSI, Integrated Silicon Solution Inc |
詳細(xì)參數(shù)
- 型號(hào)：
IS61LF51218A
- 制造商：
ISSI
- 制造商全稱(chēng)：
Integrated Silicon Solution, Inc
- 功能描述：
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ISSI |
23+ |
100-TQFP |
9231 |
詢(xún)價(jià) | |||
ISSI |
2339+ |
QFP |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
ISSI |
BGA |
2732 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢(xún)價(jià) | |||
ISSI |
23+ |
TQFP100 |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
ISSI |
24+ |
TQFP-100 |
5000 |
只做原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
ISSI |
24+ |
QFP |
4500 |
原裝正品!公司現(xiàn)貨!歡迎來(lái)電! |
詢(xún)價(jià) | ||
ISSI |
2020+ |
PBGA(119) |
3850 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
ISSI |
新年份 |
QFP |
3500 |
絕對(duì)全新原裝現(xiàn)貨,歡迎來(lái)電查詢(xún) |
詢(xún)價(jià) | ||
ISSI |
23+ |
100-TQFP |
65480 |
詢(xún)價(jià) | |||
ISSI |
20+ |
QFP |
500 |
樣品可出,優(yōu)勢(shì)庫(kù)存歡迎實(shí)單 |
詢(xún)價(jià) |
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