DESCRIPTION

The ISSIIS61(64)LPS12832A, IS61(64)LPS/VPS12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performancememory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 bits. The IS61(64)LPS/VPS12836A is organized as 131,072 words by 36 bits. The IS61(64)LPS/ VPS25618A is organized as 262,144 words by 18 bits. Fabricated with ISSIs advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.

FEATURES

? Internal self-timed write cycle

? Individual Byte Write Control and Global Write

? Clock controlled, registered address, data and control

? Burst sequence control using MODE input

? Three chip enable option for simple depth expansion and address pipelining

? Common data inputs and data outputs

? Auto Power-down during deselect

? Single cycle deselect

? Snooze MODE for reduced-power standby

? Power Supply

LPS: VDD 3.3V + 5, VDDQ 3.3V/2.5V + 5

VPS: VDD 2.5V + 5, VDDQ 2.5V + 5

? JEDEC 100-Pin TQFP, 119-ball PBGA, and 165-ball PBGA packages

? Automotive temperature available

? Lead Free available

IS61LPS12836A-200TQ屬于集成電路（IC） > 存儲(chǔ)器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61LPS12836A-200TQ存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。