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IC61LV12816-8B

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IC61LV12816-8BI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IC61LV12816-8K

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IC61LV12816-8KI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IC61LV12816-8T

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IC61LV12816-8TI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8B

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8BI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8K

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8KI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8LQI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8T

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8T

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

IS61LV12816-8TI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-8TI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
issi
16+
tsop
37
全新原裝現(xiàn)貨
詢價(jià)
ISSI
17+
TSOP
6200
100%原裝正品現(xiàn)貨
詢價(jià)
issi
2020+
tsop
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
ISSI
2023+
TSOP
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
ISSI
24+
TSOP
65200
一級(jí)代理/放心采購(gòu)
詢價(jià)
ISSI
23+
TSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI
23+
TSOP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
ISSI
2023+
TSOP
50000
原裝現(xiàn)貨
詢價(jià)
ISSI
2023+
TSOP
5800
進(jìn)口原裝,現(xiàn)貨熱賣
詢價(jià)
ISSI
23+
TSOP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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更多IS61LV12816-8TL供應(yīng)商 更新時(shí)間2025-1-4 10:00:00