DESCRIPTION

The ISSI IS61LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

? High-speed access time: 8, 10 ns

? Operating Current: 50mA (typ.)

? Stand by Current: 700μA (typ.)

? TTL and CMOS compatible interface levels

? Single 3.3V power supply

? Fully static operation: no clock or refresh required

? Three state outputs

? Data control for upper and lower bytes

? Industrial temperature available

? Lead-free available

IS61LV12816L屬于集成電路（IC） > 存儲(chǔ)器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61LV12816L存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。